any changing of specification will not be informed individual PZT669A npn silicon epitaxial planar transistor rohs compliant product h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e electrical characteristics (t amb = 2 5 c ) o p s y m b o l m i n . t y p . m a x . u n i t a r a m e t e r c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e i c = - 1 m a , i e = 0 i c = - 1 0 m a , i b = 0 i e = 1 m a , i c = 0 v c b = 1 6 0 v , i e = 0 v c b = 1 0 v , f = 1 m h z i c = 6 0 0 m a , i b = 5 0 m a v c e = 5 v , i c = 1 5 0 m a v c e = 5 v , i c = 5 0 0 m a v c e = 5 v , i c = 1 0 m a , f = 1 0 0 m h z b v c b o 1 8 0 v c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e b v c e o b v e b o v v 5 3 0 u a e m i t t e r - b a s e b r e a k d o w n v o l t a g e 6 0 p f i c b o c o b * v c e ( s a t ) * v b e ( o n ) * h f e 1 * h f e 2 f t - - - - - 1 4 - - - - - - - - 2 0 0 - - - - 1 4 0 - 1 . 5 1 - 1 0 m h z v v c o l l e c t o r c u t - o f f c u r r e n t c o l l e c t o r o u t p u t c a p a c i t a n c e c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e b a s e - e m i t t e r v o l t a g e , o n d c c u r r e n t g a i n d c c u r r e n t g a i n t r a n s i t i o n f r e q u e n c y * p u l s e t e s t : p u l s e w i d t h 3 8 0 u s , d u t y c y c l e 2 % 1 6 0 classification of h fe1 rank b c hfe1 60~120 100~200 t e s t c o n d i t i o n s v c e = 5 v , i c = 1 5 0 m a d e s c r i p t i o n t h e PZT669A is designed for low frequency p o w e r a m p l i f i e r c o m p l e m e n t a r y p a i r w i t h pzt649a. a b s o l u t e m a x i m u m r a t i n g s a t t a = 2 5 c c o l l e c t o r t o b a s e v o l t a g e e m i t t e r t o b a s e v o l t a g e c o l l e c t c u r r e n t ( d c ) c o l l e c t c u r r e n t ( p u l s e ) t o t a l p o w e r d i s s i p a t i o n o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e a v v a v i c c w v c b o v c e o i c p d t j , t s t g 1 8 0 1 6 0 3 . 0 5 . . 0 1 . . 5 1 . 5 - 5 5 ~ + 1 5 0 p a r a m e t e r s y m b o l r a t i n g s u n i t o o c o l l e c t o r t o e m i t t e r v o l t a g e v e b o ?? ?? 01 -jun-2002 rev. a page 1 of 2 sot-223 ref. min. max. ref. min. max. a 6.70 7.30 b 13 c typ. c 2.90 3.10 j 2.30 ref. d 0.02 0.10 1 6.30 6.70 e 0 c 10 c 2 6.30 6.70 i 0.60 0.80 3 3.30 3.70 h 0.25 0.35 4 3.30 3.70 5 1.40 1.80 6 6 9 a date code b c e
PZT669A npn silicon epitaxial planar transistor elektronische bauelemente any changing of specification will not be informed individual http://www.secosgmbh.com 0 1 - j u n - 2 0 0 2 r e v . a p a g e 2 o f 2 c h a r a c t e r i s t i c s c u r v e
|
